Dr. Karun Rawat

Associate Professor (Outstanding Young Faculty)
Department of Electronics & Communication,
Indian Institute of Technology (I.I.T) Roorkee, India.

B.E, PhD, SMIEEE
Member “Technical Committee MTT-12: Microwave High Power Techniques”
Member “MTT Special Interest Group in Microwave and Wireless Education
Member: “Editorial Board Wiley Journal in RFCAE, Nonlinear VNA Forum

Contact:

Room 201 N, Dept. of ECE
Indian Institute of Technology Roorkee,
Roorkee, Uttarakhand-247667.

Area of Research

Radio Frequency Active circuits:

Power Amplifiers, Efficiency enhancement Doherty Power Amplifiers, Chireix outphasing amplifiers, Waveform Engineering (Class E/F, B/J, etc.) based Octave & Multi-octave power amplifiers etc.

 

On-chip RF Circuits:

Power Amplifier Design in Gallium Nitride MMIC Design, BiCMOS RF circuits with millimeter wave applications, RF mixed signal CMOS design etc.

 

Embedding System Design for Radio development:

Delta Sigma Modulation with Noise Shaping Filter, radio functionality in wireless transmitters such as predistortion, beam forming etc.

 

Radio Frequency Device Characterization & Modeling:

Bias dependent s-parameters measurement, Nonlinear De-embedding / embedding, nonlinear vector network analysis, Large Signal Modeling (Angelov Model for GaN HEMT Design)